Mechanism for the formation of 90° dislocations in high‐mismatch (100) semiconductor strained‐layer systems
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354247
Reference15 articles.
1. Structure, properties and applications of GexSi1-xstrained layers and superlattices
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3. A review of theoretical and experimental work on the structure of GexSi1-xstrained layers and superlattices, with extensive bibliography
4. Growth and properties of Si/SiGe superlattices
5. Equilibrium critical thickness for Si1−xGexstrained layers on (100) Si
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4. Experimental observation of nucleation of misfit dislocations induced by the stress field of primary dislocations;Thin Solid Films;2019-11
5. Зарождение комплементарных дислокаций несоответствия, индуцированное фронтом первичных 60 дислокаций, в тонкопленочных гетероструктурах / Болховитянов Ю.Б., Гутаковский А.К., Дерябин А.С, Соколов Л.В.;Тезисы докладов XIV РОССИЙСКОЙ КОНФЕРЕНЦИИ ПО ФИЗИКЕ ПОЛУПРОВОДНИКОВ «ПОЛУПРОВОДНИКИ-2019»;2019-08-20
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