Strain relaxation of GeSi/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1809772
Reference45 articles.
1. Low-temperature buffer layer for growth of a low-dislocation-density SiGe layer on Si by molecular-beam epitaxy
2. Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer
3. Relaxed Si0.7Ge0.3 layers grown on low-temperature Si buffers with low threading dislocation density
4. Relaxed Ge0.9Si0.1 alloy layers with low threading dislocation densities grown on low-temperature Si buffers
5. Evolution of mosaic structure in Si0.7Ge0.3 epilayers grown on Si(001) substrates
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1. Dislocation nucleation triggered by thermal stress during Ge/Si wafer bonding process at low annealing temperature;Applied Surface Science;2021-12
2. Novel method for the determination of the optical conductivity and dielectric constant of SiGe thin films using Kato-Adachi dispersion model;Phase Transitions;2021-02-01
3. Single-Crystalline Si1−xGex (x = 0.5~1) Thin Films on Si (001) with Low Threading Dislocation Density Prepared by Low Temperature Molecular Beam Epitaxy;Applied Sciences;2019-04-28
4. Formation, Growth Mechanism and Electronic Structures of Ge Films on Si Substrates;Two-Dimensional Nanostructures for Energy-Related Applications;2016-09-30
5. Electrical characteristics of amorphous Si:H/crystalline Si0.3Ge0.7 heterojunction solar cells grown on compositionally graded buffer layers;Journal of Crystal Growth;2015-09
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