Dislocation nucleation triggered by thermal stress during Ge/Si wafer bonding process at low annealing temperature-Reference-Cited by-同舟云学术

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Dislocation nucleation triggered by thermal stress during Ge/Si wafer bonding process at low annealing temperature

Published:2021-12 Issue: Volume:568 Page:150979
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Huang Donglin,Ji Ruoyun,Yao Liqiang,Jiao Jinlong,Chen Xiaoqiang,Li Cheng,Huang Wei,Chen Songyan,Ke Shaoying

Funder

Natural Science Foundation of Yangzhou City

National Natural Science Foundation of China

Natural Science Foundation of Fujian Province

Natural Science Foundation of Jiangxi Province

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference54 articles.

1. Silicon photonics technologies for monolithic electronic-photonic integrated circuit applications;Liow;Opt. InfoBase Conf. Pap.,2011

2. High-performance Ge-on-Si photodetectors

3. Ge photodetectors for Si based optoelectronic integration;Wang;Sensors,2011

4. Self-aligned microbonded germanium metal-semiconductor-metal photodetectors butt-coupled to Si waveguides;Chen;IEEE J. Sel. Top. Quantum Electron.,2014

5. Crystallographic properties of Ge/Si heterojunctions fabricated by wet wafer bonding;Kanbe;J. Electron. Mater.,2010

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