The dissociation of (a+c) misfit dislocations at the InGaN/GaN interface

Author:

Smalc‐Koziorowska J.1ORCID,Moneta J.1,Muzioł G.1,Chromiński W.2,Kernke R.3,Albrecht M.3,Schulz T.3,Belabbas I.4

Affiliation:

1. Institute of High Pressure Physics Polish Academy of Sciences Warsaw Poland

2. Faculty of Materials Science and Engineering Warsaw University of Technology Warsaw Poland

3. Lebniz Institute for Crystal Growth Berlin Germany

4. Equipe de Cristallographie et de Simulation des Matériaux, Laboratoire de Physico‐Chimie des Matériaux et Catalyse, Faculté des Sciences Exactes Université de Bejaia Bejaia Algeria

Abstract

AbstractIn hexagonal materials, (a+c) dislocations are typically observed to dissociate into partial dislocations. Edge (a+c) dislocations are introduced into (0001) nitride semiconductor layers by the process of plastic relaxation. As there is an increasing interest in obtaining relaxed InGaN buffer layers for the deposition of high In content structures, the study of the dissociation mechanism of misfit (a+c) dislocations laying at the InGaN/GaN interface is then crucial for understanding their nucleation and glide mechanisms. In the case of the presented plastically relaxed InGaN layers deposited on GaN substrates, we observe a trigonal network of (a+c) dislocations extending at the interface with a rotation of 3° from <100> directions. High‐resolution microscopy studies show that these dislocations are dissociated into two Frank–Shockley 1/6<203> partial dislocations with the I1 BSF spreading between them. Atomistic simulations of a dissociated edge (a+c) dislocation revealed a 3/5‐atom ring structure for the cores of both partial dislocations. The observed separation between two partial dislocations must result from the climb of at least one of the dislocations during the dissociation process, possibly induced by the mismatch stress in the InGaN layer.

Publisher

Wiley

Subject

Histology,Pathology and Forensic Medicine

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3