Preface to the special issue on Microscopy of Semiconducting Materials 2023
Author:
Affiliation:
1. Department of Electronic & Electrical Engineering University of Sheffield Sheffield UK
2. Department of Materials Science and Metallurgy University of Cambridge Cambridge UK
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1111/jmi.13265
Reference7 articles.
1. Preface for the special issue on Microscopy of Semiconducting Materials 2019
2. Stöger‐Pollach M. Bukvisova K. Zenz K. Stöger L. &Scales Z.(2023).Important aspects of investigating optical excitations in semiconductors using a scanning transmission electron microscope.Journal of Microscopy 293 138–145.https://doi.org/10.1111/jmi.13242
3. Smalc‐Koziorowska J. Moneta J. Muziol G. Chrominski W. Kernke R. Albrecht M. Schulz T. &Belabbas I.(2023).The dissociation of (a+c) misfit dislocations at the InGaN/GaN interface.Journal of Microscopy 293 146–152.https://doi.org/10.1111/jmi.13234
4. Diagne A. Gonzalez Garcia L. Ndiaye S. Gogneau N. Vrellou M. Houard J. &Rigutti L.(2023).Field‐dependent abundances of hydride molecular ions in atom probe tomography of III‐N semiconductors.Journal of Microscopy 293 153–159.https://doi.org/10.1111/jmi.13233
5. Guo T. &Walther T.(2024).Towards quantification of doping in gallium arsenide nanostructures by low‐energy scanning electron microscopy and conductive atomic force microscopy.Journal of Microscopy 293 160–168.https://doi.org/10.1111/jmi.13263
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