Features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x∕Si (x∼0.4–0.5) films caused by Si substrate misorientation from (001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2905267
Reference8 articles.
1. Activation barriers to strain relaxation in lattice-mismatched epitaxy
2. Variation of dislocation morphology with strain in GexSi1−x epilayers on (100)Si
3. Strain relaxation kinetics in Si1−xGex/Si heterostructures
4. A quantitative analysis of strain relaxation by misfit dislocation glide in Si1−xGex/Si heterostructures
5. Mechanism for the formation of 90° dislocations in high‐mismatch (100) semiconductor strained‐layer systems
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The dissociation of (a+c) misfit dislocations at the InGaN/GaN interface;Journal of Microscopy;2023-10-17
2. Experimental observation of nucleation of misfit dislocations induced by the stress field of primary dislocations;Thin Solid Films;2019-11
3. Зарождение комплементарных дислокаций несоответствия, индуцированное фронтом первичных 60 дислокаций, в тонкопленочных гетероструктурах / Болховитянов Ю.Б., Гутаковский А.К., Дерябин А.С, Соколов Л.В.;Тезисы докладов XIV РОССИЙСКОЙ КОНФЕРЕНЦИИ ПО ФИЗИКЕ ПОЛУПРОВОДНИКОВ «ПОЛУПРОВОДНИКИ-2019»;2019-08-20
4. Growth and characterization of InSb on (1 0 0) Si for mid-infrared application;Applied Surface Science;2018-05
5. Growth of Highly Strained CeO2 Ultrathin Films;ACS Nano;2016-11-07
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3