Features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x∕Si (x∼0.4–0.5) films caused by Si substrate misorientation from (001)-Reference-Cited by-同舟云学术

Features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x∕Si (x∼0.4–0.5) films caused by Si substrate misorientation from (001)

Published:2008-03-31 Issue:13 Volume:92 Page:131901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bolkhovityanov Yu. B.,Deryabin A. S.,Gutakovskii A. K.,Sokolov L. V.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2905267

Reference8 articles.

1. Activation barriers to strain relaxation in lattice-mismatched epitaxy

2. Variation of dislocation morphology with strain in GexSi1−x epilayers on (100)Si

3. Strain relaxation kinetics in Si1−xGex/Si heterostructures

4. A quantitative analysis of strain relaxation by misfit dislocation glide in Si1−xGex/Si heterostructures

5. Mechanism for the formation of 90° dislocations in high‐mismatch (100) semiconductor strained‐layer systems

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