Thermodynamic interpretation of quaternary (InGaAsP) layer uniformity grown by low‐pressure metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108956
Reference8 articles.
1. The role of MOVPE in the manufacture of high performance InP based optoelectronic devices
2. A new versatile, large size MOVPE reactor
3. Properties of GaInAs(P)/InP multilayers and superlattices grown by MOVPE at atmospheric pressure
4. Improved compositional uniformity of InGaAsP grown by low pressure metalorganic vapor phase epitaxy using tertiary butyl phosphine as the phosphorus source
5. Structural properties and composition control of GaAsyP1−y grown by MBE on VPE GaAs0.63P0.37 substrates
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1. MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System;Journal of Nanomaterials;2015
2. Computational analysis of wafer temperature non-uniformity in MOVPE system;Journal of Crystal Growth;2004-05
3. The effect of group V precursor on selective area MOVPE of InP/GaAs-related materials;Journal of Crystal Growth;2004-01
4. Metal organic vapour-phase epitaxy (MOVPE) growth of InP and InGaAs using tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) in N2 ambient;Journal of Crystal Growth;1999-07
5. Improved compositional uniformity of InGaAsP grown by MOCVD through modification of the susceptor temperature profile;Journal of Crystal Growth;1998-03
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