The effect of group V precursor on selective area MOVPE of InP/GaAs-related materials-Reference-Cited by-同舟云学术

The effect of group V precursor on selective area MOVPE of InP/GaAs-related materials

Published:2004-01 Issue:2-3 Volume:261 Page:419-426
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Oh Ho-jin,Sugiyama Masakazu,Nakano Yoshiaki,Shimogaki Yukihiro

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Organometallic Vapor-Phase Epitaxy;Stringfellow,1999

2. Pyrolysis of tertiarybutylphosphine

3. Kinetic studies on thermal decomposition of MOVPE sources using fourier transform infrared spectroscopy

4. A. Kuramata, S. Yamazaki, K. Nakajima, in: A. Katz, R.M. Biefeld, R.L. Gunshor, R.J. Malik (Eds.), Materials Research Society Symposium Proceedings 216, Materials Research Society, Pittsburgh, PA, 1991, p. 365.

5. Improved compositional uniformity of InGaAsP grown by low pressure metalorganic vapor phase epitaxy using tertiary butyl phosphine as the phosphorus source

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1. Nonlinear Kinetic Analysis of InP and InAs Metal Organic Vapor Phase Epitaxy by Selective Area Growth Technique;Japanese Journal of Applied Physics;2008-11-14

2. Reactor-scale profile of group-V composition of InGaAsP studied by fluid dynamics simulation and in situ analysis of surface kinetics;Journal of Crystal Growth;2008-06

3. Kinetics of Subsurface Formation during Metal–Organic Vapor Phase Epitaxy Growth of InP and InGaP;Japanese Journal of Applied Physics;2008-03-14

4. Reactor-scale uniformity of selective-area performance in InGaAsP system;Journal of Crystal Growth;2007-01

5. Vapor phase diffusion and surface diffusion combined model for InGaAsP selective area metal–organic vapor phase epitaxy;Journal of Crystal Growth;2007-01