Kinetics of Subsurface Formation during Metal–Organic Vapor Phase Epitaxy Growth of InP and InGaP
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference31 articles.
1. Techniques to minimizeDXcenter deleterious effects in III‐V device performance
2. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
3. On the high-performance n+-GaAs/p+-InGaP/n-GaAs high-barrier gate camel-like HFETs
4. Ga0.51In0.49P/GaxIn1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional electron gas field-effect transistors
5. Microwave performance of a self-aligned GaInP/GaAs heterojunction bipolar transistor
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1. InP and InGaAs grown on InP substrate by molecular beam epitaxy;MATEC Web of Conferences;2022
2. Control of In Surface Segregation and Inter-Diffusion in GaAs on InGaP Grown by Metal–Organic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2012-05-02
3. Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM;Journal of Crystal Growth;2012-05
4. Control of In Surface Segregation and Inter-Diffusion in GaAs on InGaP Grown by Metal–Organic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2012-05-01
5. Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement;Japanese Journal of Applied Physics;2011-01-20
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