Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement-Reference-Cited by-同舟云学术

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Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement

Published:2011-01-20 Issue: Volume:50 Page:011201
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ichikawa Osamu,Fukuhara Noboru,Hata Masahiko,Nakano Takayuki,Sugiyama Masakazu,Nakano Yoshiaki,Shimogaki Yukihiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference31 articles.

1. Scaling of pseudomorphic high electron mobility transistors to decanano dimensions

2. Temperature-Dependent DC Characteristics of InGaP∕GaAs Heterojunction Bipolar Transistors with Different Passivation

3. Influence of V/III Ratio of Carbon-Doped p-GaAs on Current Gain and Its Thermal Stability in InGaP/GaAs Heterojunction Bipolar Transistors

4. A Study of Composite-Passivation of an InGaP∕GaAs Heterojunction Bipolar Transistor

5. Effect of p-doping profile on performance of strained InGaAs/InGaAsP multiple quantum well buried heterostructure laser diodes with Fe- or p/n/p-doped InP current blocking layer

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties;Journal of Applied Physics;2016-03-04

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