Improved compositional uniformity of InGaAsP grown by low pressure metalorganic vapor phase epitaxy using tertiary butyl phosphine as the phosphorus source-Reference-Cited by-同舟云学术

Improved compositional uniformity of InGaAsP grown by low pressure metalorganic vapor phase epitaxy using tertiary butyl phosphine as the phosphorus source

Published:1992-11 Issue:1-4 Volume:124 Page:112-117
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zilko J.L.,Davisson P.S.,Luther L.,Trapp K.D.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference6 articles.

1. A new versatile, large size MOVPE reactor

2. Properties of GaInAs(P)/InP multilayers and superlattices grown by MOVPE at atmospheric pressure

3. Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−ylattice matched to InP

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