Properties of GaInAs(P)/InP multilayers and superlattices grown by MOVPE at atmospheric pressure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Proc. 15th Intern. Symp. on GaAs and Related Compounds;Kamei,1989
2. Structural characterization of GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy
3. Ga0.47In0.53As/InP superlattices grown by chemical beam epitaxy: Absorption, photoluminescence excitation, and photocurrent spectroscopies
4. A new versatile, large size MOVPE reactor
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Nanoroughness localization of excitons in GaAs multiple quantum wells studied by transient four-wave mixing;Physical Review B;1995-03-15
2. Theoretical studies of GaInP-AlGaInP strained quantum-well lasers including spin-orbit split-off band effect;IEEE Journal of Quantum Electronics;1995
3. Analysis of GaInP/AlGaInP compressive strained multiple-quantum-well laser;IEEE Journal of Quantum Electronics;1994-06
4. Strain Effect on 630 nm GaInP/AlGaInP Multi-Quantum Well Lasers;Japanese Journal of Applied Physics;1994-05-15
5. High electron mobility in (InAs)n(GaAs)n short period superlattices grown by MOVPE for high-electron mobility transistor structure;Journal of Electronic Materials;1994-02
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