The role of MOVPE in the manufacture of high performance InP based optoelectronic devices-Reference-Cited by-同舟云学术

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The role of MOVPE in the manufacture of high performance InP based optoelectronic devices

Published:1988 Issue:1-4 Volume:93 Page:792-802
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nelson A.W.,Spurdens P.C.,Cole S.,Walling R.H.,Moss R.H.,Wong S.,Harding M.J.,Cooper D.M.,Devlin W.J.,Robertson M.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. 2 Gbit/s and 2.4 Gbit/s optical transmission field trial over a 32 km installed route

2. Future 1.55-µm undersea lightwave systems

3. Proc. OFC '88;Bergen,1988

4. Chemical beam epitaxial growth of extremely high quality InGaAs on InP

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1. Column III;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30

2. Surface chemistry and growth mechanisms studies of homo epitaxial (100) GaAs by laser molecular beam epitaxy;Applied Surface Science;2011-12

3. Composition Control of InGaAsP Laser Structures UsingIn-SituEmissivity Corrected Pyrometry During Epitaxial Growth;Japanese Journal of Applied Physics;2002-02-28

4. Real Time Substrate Temperature Control by Emissivity Compensated Pyrometry During InxGa1−xAs1−y/InP Growth on Production Scale Rotating Disc MOVPE Reactors;MRS Proceedings;2000

5. Emissivity Compensated Pyrometry of the Substrate Surface During Movpe Growth of InxGa1−xAs1−yPy/InP Materials in Rotating Disc Reactors;MRS Proceedings;1999

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