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Chemical beam epitaxial growth of extremely high quality InGaAs on InP

  • Published:1986-07-21 Issue:3 Volume:49 Page:170-172
  • ISSN:0003-6951
  • Container-title:Applied Physics Letters
  • language:en
  • Short-container-title:Appl. Phys. Lett.

Author:

Tsang W. T.,Dayem A. H.,Chiu T. H.,Cunningham J. E.,Schubert E. F.,Ditzenberger J. A.,Shah J.,Zyskind J. L.,Tabatabaie N.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 53 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hybrid epitaxy technique for the growth of high-quality AlInAs and GaInAs layers on InP substrates;Journal of Vacuum Science & Technology B;2019-05

2. Epitaxial Crystal Growth: Methods and Materials;Springer Handbook of Electronic and Photonic Materials;2017

3. Molecular Beam Epitaxy with Gaseous Sources;Handbook of Crystal Growth;2015

4. Simulation for silicon-compatible InGaAs-based junctionless field-effect transistor using InP buffer layer;Semiconductor Science and Technology;2013-08-09

5. Epitaxial Crystal Growth: Methods and Materials;Springer Handbook of Electronic and Photonic Materials;2006
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