Chemical beam epitaxy of InGaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336068
Reference16 articles.
1. A new GaAs, GaP, and GaAsxP1−x vacuum deposition technique using arsine and phosphine gas
2. On the use of AsH3in the molecular beam epitaxial growth of GaAs
3. Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P
4. Metalorganic CVD of GaAs in a molecular beam system
5. A new low temperature III–V multilayer growth technique: Vacuum metalorganic chemical vapor deposition
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