Organometallic vapor phase epitaxial growth and characterization of high purity GaInAs on InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95808
Reference12 articles.
1. Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44
2. Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON <111>B InP
3. Growth And Characterization Of GaAs, GaInAs, and GaInAsP for microwave applications
4. Low pressure metalorganic chemical vapor deposition of InP and related compounds
5. Organometallic vapor phase epitaxial growth of high purity GaInAs using trimethylindium
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