Organometallic vapor phase epitaxial growth of high purity GaInAs using trimethylindium
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94799
Reference16 articles.
1. Temperature dependent electron velocity-field characteristics for In0.53Ga0.47AS at high electric fields
2. Low pressure metalorganic chemical vapor deposition of InP and related compounds
3. Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44
4. Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON <111>B InP
5. Growth And Characterization Of GaAs, GaInAs, and GaInAsP for microwave applications
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