Improved compositional uniformity of InGaAsP grown by MOCVD through modification of the susceptor temperature profile
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of Substrate Surface Finish and Proximity Distance on Compositional Shift of InGaAsP Metal–Organic Vapor Phase Epitaxy in a High-Speed-Rotation Multiple-Substrate Reactor;Japanese Journal of Applied Physics;2011-08-22
2. Effect of Substrate Surface Finish and Proximity Distance on Compositional Shift of InGaAsP Metal–Organic Vapor Phase Epitaxy in a High-Speed-Rotation Multiple-Substrate Reactor;Japanese Journal of Applied Physics;2011-08-01
3. High uniformity of InGaAsP layers grown by multi-wafer MOVPE system;Journal of Crystal Growth;2004-12
4. Computational analysis of wafer temperature non-uniformity in MOVPE system;Journal of Crystal Growth;2004-05
5. High compositional uniformity and reproducibility of InGaAsP in multi-wafer metalorganic vapor phase epitaxy;Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107)
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