Direct observation of interfacial point defects generated by channel hot hole injection inn‐channel metal oxide silicon field effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105699
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1. 1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraints
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5. An electron spin resonance study of radiation‐induced electrically active paramagnetic centers at the Si/SiO2interface
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