Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper-Reference-Cited by-同舟云学术

Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper

Published:2023-03 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Vandemaele Michiel¹,Kaczer Ben¹,Bury Erik¹,Franco Jacopo¹,Chasin Adrian¹,Makarov Alexander¹,Mertens Hans¹,Hellings Geert¹,Groeseneken Guido¹

Affiliation:

1. imec,Leuven,Belgium

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117589/10117581/10118211.pdf?arnumber=10118211

Reference76 articles.

1. Forksheet FETs with Bottom Dielectric Isolation, Self-Aligned Gate Cut, and Isolation between Adjacent Source-Drain Structures

2. Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs

3. Forksheet FETs for advanced CMOS scaling: forksheet-nanosheet co-integration and dual work function metal gates at 17nm NP Space;mertens;2021 Symposium on VLSI Technology,2021

4. A review of hot-carrier degradation mechanisms in MOSFETs

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1. Challenges of Gate Stack TDDB in Gate-All-Around Nanosheet Towards Further Scaling;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Self-Heating and Process-Induced Threshold Voltage Aware Reliability and Aging Analysis of Forksheet FET;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

3. A Generic Framework for MOSFET Reliability—Part II: Gate and Drain Stress—HCD;IEEE Transactions on Electron Devices;2024-01