Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs-Reference-Cited by-同舟云学术

Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs

Published:2022-03 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Vandemaele Michiel¹,Kaczer Ben²,Tyaginov Stanislav²,Bury Erik²,Chasin Adrian²,Franco Jacopo²,Makarov Alexander,Mertens Hans²,Hellings Geert²,Groeseneken Guido¹

Affiliation:

1. KU Leuven,ESAT,Leuven,Belgium

2. Imec,Leuven,Belgium

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764470.pdf?arnumber=9764470

Reference43 articles.

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4. Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs

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