Multi-Subband Ensemble Monte Carlo simulation of Si nanowire MOSFETs-Reference-Cited by-同舟云学术

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Multi-Subband Ensemble Monte Carlo simulation of Si nanowire MOSFETs

Published:2015-09 Issue: Volume: Page:
ISSN:
Container-title:2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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Author:

Donetti Luca,Sampedro Carlos,Gamiz Francisco,Godoy Andres,Garcia-Ruiz Francisco J.,Towiez Ewan,Georgiev Vihar P.,Amoroso Salvatore Maria,Riddet Craig,Asenov Asen

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7274904/7292241/07292332.pdf?arnumber=7292332

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03

2. Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs;IEEE Transactions on Nuclear Science;2022-03

3. 3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs;IEEE Transactions on Electron Devices;2021-05

4. Enhanced Capabilities of the Nano-Electronic Simulation Software (NESS);2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2020-09-23

5. Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs;Solid-State Electronics;2018-05

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