Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs-Reference-Cited by-同舟云学术

Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs

Published:2022-03 Issue:3 Volume:69 Page:299-306
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Rony M. W.¹^ORCID,Zhang En Xia¹^ORCID,Toguchi Shintaro¹^ORCID,Luo Xuyi¹,Reaz Mahmud¹^ORCID,Li Kan¹^ORCID,Linten Dimitri²,Mitard Jerome²,Reed Robert A.¹^ORCID,Fleetwood Daniel M.¹^ORCID,Schrimpf Ronald D.¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, TN, USA

2. IMEC, Leuven, Belgium

Funder

Air Force Research Laboratory

Air Force Office of Scientific Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/9735177/09684460.pdf?arnumber=9684460

Reference98 articles.

1. Transistor aging and reliability in 14nm tri-gate technology

2. NBTI degradation: From physical mechanisms to modelling

3. Effects of Halo Doping and Si Capping Layer Thickness on Total-Dose Effects in Ge p-MOSFETs

4. Total Ionizing Dose Effects on Ge pMOSFETs With High-$k$ Gate Stack: On/Off Current Ratio

5. Sustainable electronics for nano-spacecraft in deep space missions

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