Effect of Hydrogen Molecule Release on NBTI by Low-Temperature Pre-Treatment in P-Channel Power VDMOS Transistors-Reference-Cited by-同舟云学术

Effect of Hydrogen Molecule Release on NBTI by Low-Temperature Pre-Treatment in P-Channel Power VDMOS Transistors

Published:2024-06 Issue:2 Volume:24 Page:211-218
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Liu Fengkai¹^ORCID,Zhu Cuancuan²,Liu Zhongli¹^ORCID,Yang Jianqun¹,Wei Yadong¹^ORCID,Zhang Yubao³,Li Xingji¹^ORCID

Affiliation:

1. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, China

2. Extreme Environment Materials and Device Technology Innovation Center, Chongqing Research Institute of Harbin Institute of Technology, Chongqing, China

3. Accelerator Center, Heilongjiang Institute of Atomic Energy, Harbin, China

Funder

Scientific Research Fund of Heilongjiang Academy of Sciences

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/7298/10566496/10436409.pdf?arnumber=10436409

Reference39 articles.

1. Experimental Investigation of NBTI Degradation in Power VDMOS Transistors Under Low Magnetic Field

2. NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors

3. Modeling of NBTS Effects in P-Channel Power VDMOSFETs

4. Analysis of DC Characteristics in PDSOI pMOSFETs under the Combined Effect of NBTI and TID

5. Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs

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