Forksheet FETs with Bottom Dielectric Isolation, Self-Aligned Gate Cut, and Isolation between Adjacent Source-Drain Structures-Reference-Cited by-同舟云学术

Forksheet FETs with Bottom Dielectric Isolation, Self-Aligned Gate Cut, and Isolation between Adjacent Source-Drain Structures

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
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Author:

Mertens H.¹,Ritzenthaler R.¹,Oniki Y.¹,Gowda P. Puttarame¹,Mannaert G.¹,Sebaai F.¹,Hikavyy A.¹,Rosseel E.¹,Dupuy E.¹,Peter A.¹,Vandersmissen K.¹,Radisic D.¹,Briggs B.¹,Batuk D.¹,Geypen J.¹,Martinez-Alanis G.¹,Seidel F.¹,Richard O.¹,Chan B.T.¹,Mitard J.¹,Litta E. Dentoni¹,Horiguchi N.¹

Affiliation:

1. imec,Leuven,Belgium

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019497.pdf?arnumber=10019497

Reference6 articles.

1. Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications

2. Forksheet FETs for advanced CMOS scaling: Forksheet-nanosheet co-Integration and dual work function metal gates at 17nm N-P Space;mertens;2021 Symposium on VLSI Technology Digest of Technical Papers,2021

3. Enabling complimentary FET (CFET) fabrication: selective, isotropic etch of Group IV semiconductors (Conference Presentation)

4. Improved Drying Technology of Single Wafer Tool by Using Hot IPA/DIW

5. Novel forksheet device architecture as ultimate logic scaling device towards 2nm;weckx;IEDM Tech Dig,2019

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3. Forksheet Field-Effect Transistors for Area Scaling and Gate-Drain Capacitance Reduction in Nanosheet-based CMOS Technologies;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

4. New structure transistors for advanced technology node CMOS ICs;National Science Review;2024-01-05

5. Effect of Si Separator in Forksheet FETs on Device Characteristics Investigated by Using In-House TCAD Process Emulator and Device Simulator;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27