Enabling complimentary FET (CFET) fabrication: selective, isotropic etch of Group IV semiconductors (Conference Presentation)-Reference-Cited by-同舟云学术

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Enabling complimentary FET (CFET) fabrication: selective, isotropic etch of Group IV semiconductors (Conference Presentation)

Published:2019-03-18 Issue: Volume: Page:
ISSN:
Container-title:Advanced Etch Technology for Nanopatterning VIII
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Author:

Kal Subhadeep,Oniki Yusuke,Falugh Matthew,Pereira Cheryl,Wang Qi,Holsteyns Frank,Smith Jeffrey T.,Mosden Aelan,Kumar Kaushik A.,Boemmels Juergen,Ryckaert Julien,Biolsi Peter,Hurd Trace Q.

Publisher

SPIE

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Model-free measurement of lateral recess in gate-all-around transistors with micro hard-X-ray fluorescence;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-08-02

2. Forksheet FETs with Bottom Dielectric Isolation, Self-Aligned Gate Cut, and Isolation between Adjacent Source-Drain Structures;2022 International Electron Devices Meeting (IEDM);2022-12-03

3. Nondestructive characterization of nanoscale subsurface features fabricated by selective etching of multilayered nanowire test structures using Mueller matrix spectroscopic ellipsometry based scatterometry;Journal of Vacuum Science & Technology B;2020-03

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