Model-free measurement of lateral recess in gate-all-around transistors with micro hard-X-ray fluorescence-Reference-Cited by-同舟云学术

Model-free measurement of lateral recess in gate-all-around transistors with micro hard-X-ray fluorescence

Published:2023-08-02 Issue:03 Volume:22 Page:
ISSN:2708-8340
Container-title:Journal of Micro/Nanopatterning, Materials, and Metrology
language:
Short-container-title:J. Micro/Nanopattern. Mats. Metro.

Author:

Bogdanowicz Janusz¹,Oniki Yusuke¹,Kenis Karine¹,Gowda Pallavi Puttarame¹,Mertens Hans¹,Shamieh Basel²,Leon Yonatan²,Wormington Matthew²,Van der Meer Juliette²,Charley Anne-Laure¹

Affiliation:

1. Imec, Leuven, Belgium

2. Bruker Technologies Ltd., Migdal Ha’Emek, Israel

Publisher

SPIE-Intl Soc Optical Eng

Subject

General Arts and Humanities

Reference23 articles.

1. A view on the logic technology roadmap;Horiguchi,2021

2. A novel dry selective etch of SiGe for the enablement of high performance logic stacked gate-all-around nanosheet devices;Loubet,2019

3. (Invited) Selective Etches for Gate-All-Around (GAA) Device Integration: Opportunities and Challenges

4. (Keynote) Gate-All-Around Nanowire & Nanosheet FETs for Advanced, Ultra-Scaled Technologies

5. Spectroscopy: a new route towards critical-dimension metrology of the cavity etch of nanosheet transistors

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1. Reference-free x-ray fluorescence analysis with a micrometer-sized incident beam;Nanotechnology;2024-04-24

2. Superlattice effects and limitations of non-destructive measurement of advanced Si/Si(1-x)Ge(x) superlattice structures using Mueller matrix scatterometry (MMSE) and high-resolution x-ray diffraction (XRD);Metrology, Inspection, and Process Control XXXVIII;2024-04-10

3. Detection of structural asymmetries in Forksheet FET arrays using Mueller matrix ellipsometry: a theoretical study;Journal of Micro/Nanopatterning, Materials, and Metrology;2024-02-09

4. Taming the Distribution of Light in Gate-All-Around Semiconductor Devices;Nano Letters;2024-01-17