Spectroscopy: a new route towards critical-dimension metrology of the cavity etch of nanosheet transistors-Reference-Cited by-同舟云学术

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Spectroscopy: a new route towards critical-dimension metrology of the cavity etch of nanosheet transistors

Published:2021-02-22 Issue: Volume: Page:
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Container-title:Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV
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Author:

Bogdanowicz Janusz,Oniki Yusuke,Kenis Karine,Muraki Yusuke,Nuytten Thomas,Sergeant Stefanie,Franquet Alexis,Spampinato Valentina,Conard Thierry,Hoflijk Ilse,Meersschaut Johan,Claessens Niels,Moussa Alain,Van den Heuvel Dieter,Hung Joey,Koret Roy,Charley Anne-Laure,Leray Philippe

Publisher

SPIE

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sensitivity analysis for estimating etch-recess in SiGe multilayered structures;Metrology, Inspection, and Process Control XXXVIII;2024-04-10

2. Taming the Distribution of Light in Gate-All-Around Semiconductor Devices;Nano Letters;2024-01-17

3. Model-free measurement of lateral recess in gate-all-around transistors with micro hard-X-ray fluorescence;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-08-02

4. Development of SiGe Indentation Process Control for Gate-All-Around FET Technology Enablement;IEEE Transactions on Semiconductor Manufacturing;2022-08

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