Improved Drying Technology of Single Wafer Tool by Using Hot IPA/DIW-Reference-Cited by-同舟云学术

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Improved Drying Technology of Single Wafer Tool by Using Hot IPA/DIW

Published:2012-12 Issue: Volume:195 Page:243-246
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Kim Chang Hyun¹,Yun Min Sang¹,Hwang Tae Ho¹,Nam Chang Hyeon¹,Kim Si Chul¹,Roh Jung Hun¹,Lee Mong Sup¹,An Jung Soo¹

Affiliation:

1. Samsung Electronics Co., Ltd.

Abstract

As the DRAM design rule has been smaller, the leaning normally occurred in storage pattern with high aspect ratio also appears in STI (shallow trench isolation) pattern of sub 4Xnm device. IPA (isopropyl alcohol) showing the excellent ability to replace DIW (de-ionized water) is necessary in order to meet the leaning free condition, because the spin drying method cannot satisfy with leaning free condition.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.195.243.pdf

Reference1 articles.

1. O Raccurt et. al., Influence of liquid surface tension on stiction of SOI MEMS, J. Micromech. Microeng. 14, 2004, 1083.

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1. Forksheet FETs with Bottom Dielectric Isolation, Self-Aligned Gate Cut, and Isolation between Adjacent Source-Drain Structures;2022 International Electron Devices Meeting (IEDM);2022-12-03

2. Pattern Collapse-Free Drying with Sacrificial Gap Fill Polymers;Solid State Phenomena;2018-08

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