Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range
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Published:2023-10-30
Issue:11
Volume:14
Page:2018
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ISSN:2072-666X
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Container-title:Micromachines
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language:en
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Short-container-title:Micromachines
Author:
Tyaginov Stanislav1ORCID, Bury Erik1, Grill Alexander1ORCID, Yu Zhuoqing2, Makarov Alexander1, De Keersgieter An1, Vexler Mikhail3, Vandemaele Michiel1ORCID, Wang Runsheng2, Spessot Alessio1, Chasin Adrian1, Kaczer Ben1
Affiliation:
1. Imec, Kapeldreef 75, 3001 Leuven, Belgium 2. Institute of Microelectronics, Peking University, Beijing 100871, China 3. A.F. Ioffe Institute, Polytechnicheskaya 26, 194021 St.-Petersburg, Russia
Abstract
We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a wide range of gate and drain voltages (Vgs and Vds, respectively). Special attention is paid to the contribution of secondary carriers (generated by impact ionization) to HCD, which was shown to be significant under stress conditions with low Vgs and relatively high Vds. Implementation of this contribution is based on refined modeling of carrier transport for both primary and secondary carriers. To validate the model, we employ foundry-quality n-channel transistors and a broad range of stress voltages {Vgs,Vds}.
Funder
Ministry of Science and Higher Education of the Russian Federation
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
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