An electron spin resonance study of radiation‐induced electrically active paramagnetic centers at the Si/SiO2interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332171
Reference36 articles.
1. THE EFFECT OF LOW‐ENERGY ELECTRON IRRADIATION OF METAL‐OXIDE‐SEMICONDUCTOR STRUCTURES
2. Vacuum Ultraviolet Radiation Effects in SiO2
3. Two‐stage process for buildup of radiation‐induced interface states
4. Relationship between trapped holes and interface states in MOS capacitors
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