Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs-Reference-Cited by-同舟云学术

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Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs

Published:1988 Issue:12 Volume:35 Page:2194-2209
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Heremans P.,Bellens R.,Groeseneken G.,Maes H.E.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/449/00008794.pdf?arnumber=8794

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