Dynamic degradation of a-InGaZnO thin-film transistors under pulsed gate voltage stress
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4916825
Reference14 articles.
1. Present status of amorphous In–Ga–Zn–O thin-film transistors
2. Two-step Electrical Degradation Behavior in α-InGaZnO Thin-film Transistor Under Gate-bias Stress
3. Effect of Temperature and Electric Field on Degradation in Amorphous InGaZnO TFTs Under Positive Gate and Drain Bias Stress
4. Investigating the Drain-Bias-Induced Degradation Behavior Under Light Illumination for InGaZnO Thin-Film Transistors
5. Analysis of Degradation Mechanisms in Low-Temperature Polycrystalline Silicon Thin-Film Transistors under Dynamic Drain Stress
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1. Asymmetry Degradation Behavior Under Forward and Backward Overlap Dynamical Stress in Large-Size Amorphous InGaZnO TFT;IEEE Transactions on Electron Devices;2024-09
2. Reliability of indium-tin-zinc-oxide thin-film transistors under dynamic drain voltage stress;Applied Physics Letters;2024-07-08
3. Reliability issues of amorphous oxide semiconductor-based thin film transistors;Journal of Materials Chemistry C;2024
4. Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress;IEEE Journal of the Electron Devices Society;2024
5. Roles of Trap States in the Dynamic Degradation of Polycrystalline Silicon Thin-Film Transistors Under AC Gate Bias Stress;IEEE Transactions on Electron Devices;2024-01
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