Two-step Electrical Degradation Behavior in α-InGaZnO Thin-film Transistor Under Gate-bias Stress-Reference-Cited by-同舟云学术

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Two-step Electrical Degradation Behavior in α-InGaZnO Thin-film Transistor Under Gate-bias Stress

Published:2013-05 Issue:5 Volume:34 Page:635-637
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chen Fa-Hsyang,Pan Tung-Ming,Chen Ching-Hung,Liu Jiang-Hung,Lin Wu-Hsiung,Chen Po-Hsueh

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6506844/06479236.pdf?arnumber=6479236

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved Environmental Stability of InSnO Thin-Film Transistor by Interface Engineering;IEEE Transactions on Electron Devices;2024-05

2. Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress;IEEE Open Journal of Nanotechnology;2024

3. Degradation of InSnZnO Thin-Film Transistors Under Negative Bias Stress;IEEE Transactions on Electron Devices;2023-12

4. Effects of Ti Doping on the Electrical Properties and Gate-Bias Stability of Amorphous Zinc–Tin–Oxide Thin-Film Transistors;ACS Applied Electronic Materials;2023-05-30

5. Negative-Bias-Stress-Induced Current Instability in Quasi-2D Tellurium Field-Effect-Transistors;2023 6th International Conference on Electronics Technology (ICET);2023-05-12

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