Effects of Ti Doping on the Electrical Properties and Gate-Bias Stability of Amorphous Zinc–Tin–Oxide Thin-Film Transistors-Reference-Cited by-同舟云学术

Effects of Ti Doping on the Electrical Properties and Gate-Bias Stability of Amorphous Zinc–Tin–Oxide Thin-Film Transistors

Author:

Park Sunghyun¹²,Park Boyeon¹,Jeon Seoung-Pil³,Kang Youngjin¹,Kim Jaehyun⁴,Park Sung Kyu³^ORCID,Kim Yong-Hoon¹^ORCID

Affiliation:

1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea

2. Mobile Display Yield Enhancement, Samsung Display Co., Asan 31454, Korea

3. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea

4. Department of Chemistry and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

Reference41 articles.

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