Enhancing radiation-resistance of amorphous indium–zinc-oxide thin-film transistors by group IV transition element doping-Reference-Cited by-同舟云学术

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Enhancing radiation-resistance of amorphous indium–zinc-oxide thin-film transistors by group IV transition element doping

Published:2023 Issue:30 Volume:11 Page:10324-10332
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kim Youngseok¹,Kim Myung-Gil²^ORCID,Kim Choongik¹^ORCID

Affiliation:

1. Department of Chemical and Biomolecular Engineering, Sogang University, 35 Baekbom-ro, Mapo-gu, Seoul 04107, Republic of Korea

2. School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon 16419, Republic of Korea

Abstract

InZnO TFTs doped with group IV transition elements showed enhanced radiation-resistance compared to undoped InZnO TFTs.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC01874A

Reference56 articles.

1. Low-power electronic technologies for harsh radiation environments

2. The space radiation environment for electronics

3. Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET

4. Soft errors in advanced semiconductor devices-part I: the three radiation sources

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