Enhanced Performance and Stability of Atomic Layer Deposited In₂O₃ Transistors With Multi-Function Cation-Doped ZnSnO Layers-Reference-Cited by-同舟云学术

Enhanced Performance and Stability of Atomic Layer Deposited In₂O₃ Transistors With Multi-Function Cation-Doped ZnSnO Layers

Published:2024-05 Issue:5 Volume:45 Page:845-848
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhu Qiaoji¹^ORCID,Huang Yi¹,Wu Jianting¹,Guo Min¹,Ou Hai¹^ORCID,Liu Baiquan¹^ORCID,Lu Xubing²^ORCID,Chen Jun¹^ORCID,Liang Xiaoci¹^ORCID,Wu Qian³,Liu Chuan¹^ORCID

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and the School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China

2. South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China

3. School of Computer and Information Engineering, Guangdong Polytechnic of Industry and Commerce, Guangzhou, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Science and Technology Projects in Guangzhou

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10509537/10478563.pdf?arnumber=10478563

Reference23 articles.

1. Critical Assessment of the High Carrier Mobility of Bilayer In₂O₃/IGZO Transistors and the Underlying Mechanisms

2. Comprehensive Review on Amorphous Oxide Semiconductor Thin Film Transistor

3. A Review of Phototransistors Using Metal Oxide Semiconductors: Research Progress and Future Directions

4. Dependence of device behaviours on oxygen vacancies in ZnSnO thin-film transistors

5. Ultrathin InGaO Thin Film Transistors by Atomic Layer Deposition