Degradation of InSnZnO Thin-Film Transistors Under Negative Bias Stress-Reference-Cited by-同舟云学术

Degradation of InSnZnO Thin-Film Transistors Under Negative Bias Stress

Published:2023-12 Issue:12 Volume:70 Page:6381-6386
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jiang Zhendong¹,Zhang Meng¹^ORCID,Deng Sunbing²^ORCID,Wong Man²^ORCID,Kwok Hoi-Sing²

Affiliation:

1. State Key Laboratory of Radio Frequency Heterogeneous Integration and the College of Electronics and Information Engineering, Shenzhen University, Shenzhen, China

2. State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Hong Kong, China

Funder

Shenzhen Municipal Research Program

Innovation and Technology Fund of Hong Kong

Basic and Applied Basic Research Foundation of Guangdong Province

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10328902/10308749.pdf?arnumber=10308749

Reference41 articles.

1. Enhanced Electrical and Mechanical Performance of InSnZnO TFTs With Multifunctional Laminated Organic Passivation Layer

2. 1/f noise sources

3. Mobility–stability trade-off in oxide thin-film transistors

4. Abnormal Bias Instabilities Induced by Lateral H₂O Diffusion Into Top-Gate Insulator of a-InGaZnO Thin-Film Transistors

5. Light-induced bias stability of crystalline indium-tin-zinc-oxide thin film transistors

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