Abnormal Bias Instabilities Induced by Lateral H<sub>2</sub>O Diffusion Into Top-Gate Insulator of a-InGaZnO Thin-Film Transistors-Reference-Cited by-同舟云学术

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Abnormal Bias Instabilities Induced by Lateral H₂O Diffusion Into Top-Gate Insulator of a-InGaZnO Thin-Film Transistors

Published:2022 Issue: Volume:10 Page:341-345
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Li Jiye¹^ORCID,Peng Hao¹^ORCID,Yang Huan¹,Zhou Xiaoliang¹^ORCID,Lu Lei¹^ORCID,Zhang Shengdong¹^ORCID

Affiliation:

1. School of Electronic and Computer Engineering, Peking University, Shenzhen, China

Funder

National Natural Science Foundation of China

Shenzhen Municipal Scientific Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/9714452/09758949.pdf?arnumber=9758949

Reference29 articles.

1. Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water

2. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

3. Water-related instability in TFTs formed using deposited gate oxides

4. Self-Aligned Top-Gate Amorphous InGaZnO TFTs With Plasma Enhanced Chemical Vapor Deposited Sub-10 nm SiO2 Gate Dielectric for Low-Voltage Applications

5. Suppression of the Short-Channel Effect in Dehydrogenated Elevated-Metal Metal- Oxide (EMMO) Thin-Film Transistors

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Post-annealing effect of low temperature atomic layer deposited Al₂O₃ on the top gate IGZO TFT;Nanotechnology;2024-01-25

2. Degradation of InSnZnO Thin-Film Transistors Under Negative Bias Stress;IEEE Transactions on Electron Devices;2023-12

3. Significant Degradation Reduction in Metal Oxide Thin-Film Transistors via the Interaction of Ionized Oxygen Vacancy Redistribution, Self-Heating Effect, and Hot Carrier Effect;IEEE Transactions on Electron Devices;2023-08

4. Ultra-thin top-gate insulator of atomic-layer-deposited HfOx for amorphous InGaZnO thin-film transistors;Applied Surface Science;2023-07

5. 40‐4: Invited Paper: Self‐Aligned Top‐Gate Amorphous In‐Ga‐Zn‐O Thin‐Film Transistors with Hafnium‐Induced Source/Drain Regions;SID Symposium Digest of Technical Papers;2023-06

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