Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress-Reference-Cited by-同舟云学术

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Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress

Published:2024 Issue: Volume:12 Page:331-337
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Hong Dongsheng¹,Zhang Bing¹,Zhang Dongli¹^ORCID,Wang Mingxiang¹^ORCID,Wang Rongxin²

Affiliation:

1. School of Electronic and Information Engineering, Soochow University, Suzhou, China

2. Chinese Academy of Sciences, Suzhou Institute of Nano-Tech and Nano-Bionics, Suzhou, China

Funder

National Natural Science Foundation of China

Jiangsu Provincial Key Research and Development Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/6245494/10416702/10499976.pdf?arnumber=10499976

Reference35 articles.

1. 39‐3: Invited Paper: LTPO TFT Technology for AMOLEDs †

2. Improved Multi-bit Statistics of Novel Dual-gate IGZO 2T0C DRAM with In-cell V_TH Compensation and ΔV_SN/ΔV_DATA Boosting Technique

3. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

4. High-Performance a-IGZO TFT Fabricated With Ultralow Thermal Budget via Microwave Annealing

5. Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors

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