Improved Multi-bit Statistics of Novel Dual-gate IGZO 2T0C DRAM with In-cell VTH Compensation and ΔVSN/ΔVDATA Boosting Technique-Reference-Cited by-同舟云学术

Improved Multi-bit Statistics of Novel Dual-gate IGZO 2T0C DRAM with In-cell V_TH Compensation and ΔV_SN/ΔV_DATA Boosting Technique

Published:2023-12-09 Issue: Volume: Page:1-4
ISSN:
Container-title:2023 International Electron Devices Meeting (IEDM)
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Author:

Chen Kaifei¹,Zhu Zhengyong²,Lu Wendong¹,Liu Menggan¹,Liao Fuxi¹,Wu Zijing¹,Niu Jiebin¹,Kang Bok-Moon¹,Dan Wang²,Wu Xie-Shuai²,Liu Ming-Xu²,Yu Yong²,Yang Nan²,Wang Gui-Lei²,Cao Kan-Yu³,Wang Lingfei¹,Geng Di¹,Lu Nianduan¹,Yang Guanhua¹,Zhao Chao²,Nathan Arokia⁴,Li Ling¹,Liu Ming¹

Affiliation:

1. Chinese Academy of Sciences,State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics,Beijing,China

2. Bejing Superstring Academy of Memory Technology,Beijing,China,100176

3. ChangXin Memory Technologies, Inc.,Hefei,China,230071

4. Cambridge University,Darwin College,Cambridge,UK,CB3 9EU

Funder

Institute of Microelectronics

Chinese Academy of Sciences

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10413659/10413660/10413770.pdf?arnumber=10413770

Reference6 articles.

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