Investigating the Drain-Bias-Induced Degradation Behavior Under Light Illumination for InGaZnO Thin-Film Transistors-Reference-Cited by-同舟云学术

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Investigating the Drain-Bias-Induced Degradation Behavior Under Light Illumination for InGaZnO Thin-Film Transistors

Published:2012-07 Issue:7 Volume:33 Page:1000-1002
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Hsieh Tien-Yu,Chang Ting-Chang,Chen Te-Chih,Tsai Ming-Yen,Chen Yu-Te,Jian Fu-Yen,Chung Yi-Chen,Ting Hung-Che,Chen Chia-Yu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6224205/06204312.pdf?arnumber=6204312

Cited by 45 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrogen diffusion and its electrical properties variation as a function of the IGZO stacking structure;Scientific Reports;2022-11-17

2. Hydrogen diffusion and its electrical properties variation as a function of the IGZO stacking structure;2022-09-22

3. Amorphous IGZO Thin-Film Transistor Gate Driver in Array for Ultra-Narrow Border Displays;IEEE Journal of the Electron Devices Society;2022

4. Degradation Behavior of Etch-Stopper-Layer Structured a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress and Illumination;IEEE Transactions on Electron Devices;2021-02

5. Effect of annealing ambient gases on the bias stability of amorphous SnSiO thin-film transistors;Semiconductor Science and Technology;2020-09-22

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