Maximum current in nitride-based heterostructure field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1476054
Reference5 articles.
1. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
2. Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors
3. 7.5 kW/mm2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates
4. Energy Band/Lattice Mismatch Engineering in Quaternary AlInGaN/GaN Heterostructure
5. Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors
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2. Transport properties of SiO2/AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistors on SiC substrate;Journal of Physics D: Applied Physics;2014-03-11
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