Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1412591
Reference14 articles.
1. Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs
2. Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies
3. Large signal frequency dispersion of AlGaN/GaN heterostructure field effect transistors
4. Current limitation after pinch-off in AlGaN/GaN FETs
5. Trapping effects and microwave power performance in AlGaN/GaN HEMTs
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