Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors-Reference-Cited by-同舟云学术

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Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors

Published:2010-04-20 Issue:4 Volume:49 Page:046504
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Gregušová Dagmar,Gaži vStefan,Sofer Zdeněk,Stoklas Roman,Dobročka Edmund,Mikulics Martin,Greguš Ján,Novák Jozef,Kordoš Peter

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference20 articles.

1. Maximum current in nitride-based heterostructure field-effect transistors

2. Influence of passivation induced stress on the performance of AlGaN/GaN HEMTs

3. Novel dielectrics for gate oxides and surface passivation on GaN

4. Improvement of device characteristics in MIS AlGaN/GaN heterostructure field-effect transistors by designing insulator/AlGaN structures

5. High-power SiO2∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistors

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment;Applied Surface Science;2017-02

2. Morphological and optical comparison of the Si doped GaN thin film deposited onto the transparent substrates;Materials Research Express;2016-04-18

3. Preparation and Properties of GaN-Based MOSHFETs;ECS Transactions;2012-08-30

4. Performance of AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors with AlN gate insulator prepared by reactive magnetron sputtering;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-01

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