Improved insight in charge trapping of high-k ZrO2/SiO2 stacks by use of tunneling atomic force microscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2957072
Reference22 articles.
1. Electrical characterization of high-dielectric-constant/SiO2metal–oxide–semiconductor gate stacks by a conductive atomic force microscope
2. Thickness determination of thin and ultra-thin SiO2 films by C-AFM IV-spectroscopy
3. Influence of the manufacturing process on the electrical properties of thin (<4nm) Hafnium based high-k stacks observed with CAFM
4. Conducting atomic force microscopy study of silicon dioxide breakdown
5. Electrical characterization of stressed and broken down SiO2 films at a nanometer scale using a conductive atomic force microscope
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2. Modified resistive switching performance by increasing Al concentration in HfO2 on transparent indium tin oxide electrode;Ceramics International;2021-01
3. Investigation of High-k Dielectric Stacks by C-AFM: Advantages, Limitations, and Possible Applications;Conductive Atomic Force Microscopy;2017-08-16
4. Determination of Fowler–Nordheim tunneling parameters in Metal–Oxide–Semiconductor structure including oxide field correction using a vertical optimization method;Solid-State Electronics;2016-08
5. Improved electrical behavior of ZrO2-based MIM structures by optimizing the O3 oxidation pulse time;Materials Science in Semiconductor Processing;2015-01
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