Investigation of High-k Dielectric Stacks by C-AFM: Advantages, Limitations, and Possible Applications
Author:
Affiliation:
1. Fraunhofer Institute for Integrated Systems and Device Technology IISB; Schottkystrasse 10 91058 Erlangen Germany
2. Institute of Solid State Physics; Bulgarian Academy of Sciences; 72 Tzarigradsko Chaussee 1784 Sofia Bulgaria
Publisher
Wiley-VCH Verlag GmbH & Co. KGaA
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/9783527699773.ch4/fullpdf
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3. Influence of the manufacturing process on the electrical properties of thin (<4 nm) Hafnium based high-k stacks observed with CAFM;Lanza;Microelectron. Reliab.,2007
4. Electrical scanning probe microscopy techniques for the detailed characterization of high-k dielectric layers;Rommel;ECS Trans.,2010
5. Evaluation of the electrical contact area in contact-mode scanning probe microscopy;Celano;J. Appl. Phys.,2015
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