Electrical characterization of high-dielectric-constant/SiO2metal–oxide–semiconductor gate stacks by a conductive atomic force microscope-Reference-Cited by-同舟云学术

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Electrical characterization of high-dielectric-constant/SiO2metal–oxide–semiconductor gate stacks by a conductive atomic force microscope

Published:2005-06-29 Issue:9 Volume:16 Page:1506-1511
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Blasco X,Porti M,Nafría M,Aymerich X,Pétry J,Vandervorst W

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/16/i=9/a=016/pdf

Reference13 articles.

1. Conducting atomic force microscopy for nanoscale electrical characterization of thin SiO2

2. High-κ gate dielectrics: Current status and materials properties considerations

3. Current transport in metal/hafnium oxide/silicon structure

4. Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of High-k Dielectric Stacks by C-AFM: Advantages, Limitations, and Possible Applications;Conductive Atomic Force Microscopy;2017-08-16

2. Ordered arrangement of irradiation-induced defects of polycrystalline tungsten irradiated with low-energy hydrogen ions;Journal of Nuclear Materials;2015-09

3. Evaluation of the electrical contact area in contact-mode scanning probe microscopy;Journal of Applied Physics;2015-06-07

4. Lanthanum oxide nanostructured films synthesized using hot dense and extremely non-equilibrium plasma for nanoelectronic device applications;Journal of Materials Science;2013-11-05

5. Single-bit failure analysis at a nanometer resolution by conductive atomic force microscopy;Microelectronics Reliability;2012-01

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