Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1326482
Reference14 articles.
1. Fabrication and characterization of Si-MOSFET's with PECVD amorphous Ta2O5 gate insulator
2. Crystalline Oxides on Silicon: The First Five Monolayers
3. Thermodynamic stability of binary oxides in contact with silicon
4. Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon
5. The chemical vapour deposition and characterization of ZrO2 films from organometallic compounds
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