Determination of Fowler–Nordheim tunneling parameters in Metal–Oxide–Semiconductor structure including oxide field correction using a vertical optimization method-Reference-Cited by-同舟云学术

Determination of Fowler–Nordheim tunneling parameters in Metal–Oxide–Semiconductor structure including oxide field correction using a vertical optimization method

Published:2016-08 Issue: Volume:122 Page:56-63
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Toumi S.,Ouennoughi Z.,Strenger K.C.,Frey L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

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4. Fowler–Nordheim tunneling into thermally grown SiO2;Lenzlinger;J Appl Phys,1969

5. A review of gate tunneling current in MOS devices;Ranuarez;Microelectron Reliab,2006

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